Abstract
AbstractAlGaInN layers at compositions near lattice‐matched to GaN have been grown by molecular beam epitaxy. X‐ray diffraction and atomic force microscopy show single‐phase quaternary layers with smooth morphology. Heterostructures with thin nearly strain‐free AlGaInN‐barriers exhibit high values for sheet electron density and mobility ranging up to 2.1×1013 cm‐2 and 1240 cm2/Vs, respectively. The epitaxial design of the structures comprises a multi‐layer spacer which enables a wider separation between channel and barrier compared to a single AlN interlayer and serves as a protection during growth. A series of wafers with varied composition in the barrier reveals that the electron mobility increases with Ga‐content in AlGaInN as expected considering the miscibility of quaternary nitrides. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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