Abstract
Two device structures are presented for the solution of two problems that result when an AlGaAs heterojunction bipolar transistor is used in GaAs integrated circuits. The first is the 2-kT surface recombination current problem, which seriously reduces the current gain, especially at low current level. It is found that by sandwiching a high band-gap p-type AlGaAs in the emitter-base junction interface, the 2-kT current could be substantially reduced, and the current gain displays flattened characteristics at low collector current (<1 μA). The second problem is how to reliably smooth out the potential spike at the base-collector interface which results in a serious voltage-dependent collector current in the common emitter I-V characteristics of the transistors. It is found that by adding a thin spacer layer with the same composition but the opposite type as the base layer in the base-collector junction interface, the potential spike can be easily and reproducibly suppressed.
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