Abstract
This work presents an investigation on the electronic transport of two devices based on Zigzag Phagraphene Nanoribbons of different widths (ZPGNR1 and ZPGNR2) with Nitrogen-doped edge terminations based on DFT-NEGF methodology using TranSIESTA code. Our results show different transport regimes: (i) ZPGNR1 device exhibits metallic behavior and metal-semiconductor transition when the bias voltage is increased, with symmetry on the eigenchannels (ECs) and the field-effect transistor (FET) signature; and (ii) ZPGNR2 device presents topological insulator (TI) behavior and two operation windows, the first with FET signature characterized by the TI-semiconductor transition and the second with resonant tunnel diode (RTD) signature with broken ECs symmetry due to potential barrier caused by N-doping at the edge and the central region is preferential transport path for the device, inherent to TI systems, generating a negative differential resistance (NDR). Another alternative for ZPGNR2 is to consider a current limiter device Molecular Positive Electronic Transition (MPET)-like.
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