Design of MMIC class-E power amplifier with adaptive bias control and built-in linearizer using 0.5 μm pHEMT technology

Abstract

A new topology of Class-E power amplifier at 1.9 GHz designed and implemented using 0.5μm GaAs pHEMT technology. The design adapts a built-in linearizer and adaptive bias control circuit which resulted with better linearity and Output power at 1 dB compression point(OP@1 dB). Two stage class-E amplifier with linear-mode pHEMT in the input bias circuit results in PAE of 89% at 1.9 GHz with output power (OP@1dB) of 21.5 dBm. The Third order intermodulation (IMD3) suppression of proposed Adaptive bias Class-E power amplifier with linear mode pHEMT in the input bias circuit is 52dBc and it is 7dBc higher compared to Class-E Power amplifier with pHEMT linearizer. It also results in 5% improvement in output power at 1dB compression point (OP@1 dB) compared to Class-E power amplifier. The proposed PA incorporated with adaptive bias and built-in Linearizer using 0.5μm GaAs pHEMT technology in PCS frequency band gives 40dBc improvement in IMD3 compared to basic Class E power amplifier.