Abstract
The reference voltage is a core part of RFID tags, its performance directly determines the whole chip's life and performance. The temperature coefficient is one of the important performances of the reference voltage source and the high-order temperature compensation is an effective method to reduce the temperature coefficient of the reference source. A low temperature coefficient bandgap reference is designed based on the standard 65nm CMOS process, and the low-supply voltage operation with bandgap reference circuit with current mode structure. The designed CMOS bandgap voltage reference is in the range of −20°C to 100°C with temperature coefficient of 9.6 ppm/°C and provides a good Power Supply Rejection Ratio(PSRR) of 79dB in the low frequency. The results of simulation show that the design improve the performance of the bandgap reference voltage source effectively.
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