Abstract
This paper presents a different approach of Intermediate Frequency (IF) amplifier using 0.18 μm MIETEC technology channel length of MOSFET Darlington transistors. In contrast to Bipolar conventional Darlingtonpair, a MOSFET Darlington configuration is employed to reduce supply voltage (VDD) and DC consumption power (Pc). The frequency response parameters of the proposed design such as bandwidth, gain bandwidth product, input/output noises and noise figure (NF) are improved in proposed (IF) amplifier. Moreover, a dual-input and dual-output (DIDO) IF amplifier constructed from two symmetrical single input and single output (SISO) (IF) amplifier is proposed too. The idea is to achieve improved bandwidth, and flat response, because these parameters are very important in high frequency applications. Simulation results that obtained by P-SPICE program are 1.2 GHz Bandwidth (BW), 3.4 GHz (gain bandwidth product), 0.5 mW DC consumption power (Pc) and the low total output noise is 12 nV with 1.2 V single supply voltage.
Highlights
The communication market has been growing very fast during the last decade especially for mobile communication systems
This paper presents a different approach of Intermediate Frequency (IF) amplifier using 0.18 μm MIETEC technology channel length of MOSFET Darlington transistors
A dual-input and dual-output (DIDO) (IF) amplifier constructed from two symmetrical (SISO) (IF) amplifiers is proposed in this approach
Summary
The communication market has been growing very fast during the last decade especially for mobile communication systems. The low power, low voltage and low noise (IF) amplifier is one of the most essential building blocks in the communication circuits. At higher frequencies its response becomes poorer than that of a single transistor amplifier [5] To overcome this problem, a number of modifications are attempted in Darlington pair amplifiers either by adding some extra biasing resistances in the circuit or by using Triple Darlington topology the earlier published Darlington amplifiers [5,6,7,8]. A simple circuitry high performance single input and single output (SISO) (IF) amplifier based on (0.18 um) channel length MOSFETs Darlington configuration is proposed. The proposed amplifier used small channel-length (0.18 μm) to overcome the problems in consumption power, limitation in bandwidth, and inter-electrode capacitances. The proposed dual-input and dual output (DIDO) (IF) amplifier is important in vast area of mobile applications such as multiband, wideband, and high-isolation multiple-input multiple-output techniques
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