Design of low power high-speed full, swing 11T CNTFET adder

Abstract

As the semiconductor industry continues to decrease in size, it faces many issues, such as scalability, leakage, short-channel effects, and reliability. carbon nanotubes (CNT) has become a potential new technology that can address the shortcomings of CMOS without compromising both performance and reliability. The research presents the design, simulation, and comparison of an improved full-swing 11 Transistor (11T) adder based on CNT with a CMOS implementation in the 32 nm technological node. The CNT-based adder demonstrated superior performance compared to CMOS-based equivalents in terms of power consumption and delay, along with the power-delay product (PDP). The CNTFET adder demonstrates a minimum power consumption reduction of 73 %, a minimum decrease in delay of 29 %, and a minimum reduction in the power-delay product (PDP) of 81 % when compared to the CMOS version of the adder with supply voltage ranging from 0.8 V to 1.2 V. The CNTFET adder demonstrates a minimum power consumption reduction of 64 %, a minimum decrease in delay of 19 %, and a minimum reduction in the power-delay product (PDP) of 71 % when compared to the CMOS version of the adder with temperature ranging from -25 °C to 75 °C.