Abstract
Power dissipation of CMOS IC is a key factor in low power applications especially in RFID tag memories. Generally, tag memories like electrically erasable programmable read-only memory (EEPROM) require an internal clock generator to regulate the internal voltage level properly. In EEPROM, oscillator circuit can generate any periodic clock signal for frequency translation. Among different types of oscillators, a current starved ring oscillator (CSRO) is described in this research due to its very low current biasing source, which in turn restrict the current flows to reduce the overall power dissipation. The designed CSRO is limited to three stages to reduce the power dissipation to meet the specs. The simulated output shows that, the improved CSRO dissipates only 4.9 mW under the power supply voltage (VDD) 1.2 V in Silterra 130 nm CMOS process. Moreover, this designed oscillator has the lowest phase noise -119.38 dBc/Hz compared to other research works. In addition, the designed CSRO is able to reduce the overall chip area, which is only 0.00114 mm2. Therefore, this proposed low power and low phase noise CSRO will be able to regulate the voltage level successfully for low power RFID tag EEPROM.
Highlights
Radio frequency identification (RFID) is a detection system, where communications happen through radio waves to complete the data transmission/ reception process between the reader and tag [1]
erasable programmable read-only memory (EEPROM) is the most used tag memory, which is applicable to an RFID tag, DC-DC converter, SOC and FPGA system due to its advantages of low cost, low power and compatibility with the standard CMOS process [1]
This paper presents an improved current starved ring oscillator (CSRO) circuit, which is suitable for the EEPROM voltage regulator in RFID tags
Summary
Radio frequency identification (RFID) is a detection system, where communications happen through radio waves to complete the data transmission/ reception process between the reader and tag [1]. In an RFID system, transponder contains an electronic microchip with three main blocks; like front-end digital baseband processor and the memory, where the product information’s are stored inside the tag memory. A key design aspect for RFID transponder IC is the low power dissipation and low cost. EEPROM is the most used tag memory, which is applicable to an RFID tag, DC-DC converter, SOC and FPGA system due to its advantages of low cost, low power and compatibility with the standard CMOS process [1]
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