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Abstract
We report the design of an active region of InxGa1−xAs1−yNy∕AlAs quantum cascade laser structure emitting in the near infrared wavelength range based on an eight-band k∙p model. The InxGa1−xAs1−yNy∕AlAs heterostructure system is of significant interest for the development of short wavelength quantum cascade lasers due to its large conduction band discontinuity (∼1.5eV) and compatibility with the mature GaAs fabrication process. A detailed analysis of the intersubband transition energy within the conduction band as a function of layer thickness, composition, electric field, and temperature has been carried out. Finally, an optimized combination of In0.2Ga0.8As0.97N0.03∕AlAs three-coupled-well structure has been obtained. Under an applied field of 100kV∕cm and at room temperature, a shortest wavelength of 3.4μm has been achieved by making use of this system without introducing an upper lasing level beyond the X minima of the AlAs barrier.
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