Design of Integrated Millimeter Wave Microstrip Pseudo-Interdigital Band pass Filter Using 0.18μm CMOS Technology

Abstract

High selectivity design of an improved on-chip band pass filter for 60 GHz millimeter-wave applications using0.18 μm CMOS technology is presented. A new type of miniaturized microstrip bandpass filters with pseudo- interdigital structure without via holes grounded resonators is described. A very compact filter of this type, having a size less than quarter-wavelength by quarter-wavelength at a mid-band frequency of 60 GHz was designed. The adoption of a pseudo- interdigital BPF and utilization of two transmissions zero permits a compact size and high selectivity for the BPF. Besides, two defected ground structure cells are etched under the coupled lines to improve the filter insertion loss. The proposed BPF has the center frequency of 60 GHz, insertion loss of -3.6. dB, a 3dB band width of 8 GHz, and core size 200×500 μm2 with total chip size 500×300 μm2 (including bonding pads