Abstract
A silicon-on-insulator (SOI) CMOS technology on high-resistivity silicon substrates is presented for the design of high-power switches for cellular and wireless local area network handset applications. A design methodology is introduced to design high-order switches for optimal insertion loss and isolation performance. Sources of nonlinearities in SOI switches are discussed. To the best of our knowledge, this work is the first demonstration of high-power switches on a high-resistivity SOI CMOS technology for high-volume cellular handset applications with adequate intermodulation and harmonic distortion performance. The design details and measurement results for a variety of RF switches with general-purpose input/output and mobile industry processor interface control interfaces, flip-chip/wire-bond packaging, and for various standards are discussed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: IEEE Transactions on Microwave Theory and Techniques
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
