Abstract

This paper presents the design of a wide bandwidth high performance CMOS realization of dual-output second generation current conveyor (CCII±) at 32nm technology node. HSPICE simulation shows that voltage and current bandwidths in excess of 10GHz are obtained, thus making the module quite suitable for applications in the microwave range of frequencies. Besides, the circuit is able to operate at reduced power supply of ±0.9V and presents 2.54k??? as Rx input port resistance for a control current of 8uA.

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