Abstract
AbstractIn this letter, a novel design method of split‐ring resonator (SRR) as the input matching network (IMN) of power amplifier (PA) is proposed. Compared with conventional microstrip lines, SRR is capable of providing necessary harmonic short‐circuit while achieving broadband impedance matching. Applying the even–odd‐mode theory, the impedance transformation characteristics of SRR are analyzed and show SRR can perform accurate impedance matching. To verify the proposed method, a PA is designed and implemented, the input impedance of 10‐W GaN transistor is well matched to the source impedance by the SRR IMN in the operation band of 1.0–3.0 GHz. The measurement results show that the maximum drain efficiency of PA can reach 79.5% with 41.8 dBm of average output power in the operation band.
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