Abstract
The design of a harmonic-tuned dual-band GaN HEMT power amplifier (1.28 GHz and 2.14 GHz) is presented. The transistor's load impedance at the fundamental frequency, the second and third harmonics in both pass-bands were optimally selected to increase the output power and efficiency. In order to design an output matching network from these data, a new CAD procedure has been used that is implemented by means of the genetic-algorithm-based software for automatic synthesis of passive networks. This allows facilitating and accelerating the network design significantly. The measured performances of the dual-band amplifier are as follows: Pout = 37.28 dBm, G = 11 dB, PAE = 42.1% at f1 = 1.28 GHz; Pout = 35.7 dBm, G = 9 dB, PAE = 23.7% at f2 = 2.14 GHz.
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