Abstract
IBIEC (Ion Beam Induced Epitaxial Crystallization) is one of the methods of SPEC (Solid Phase Epitaxial Crystallization) and is characterized by its low temperature crystallization and low thermal activation energy relative to thermally induced SPEC. IBIEC has been investigated for many years from the view of interest in its mechanism concerned with ion-solid interaction and application to a low temperature SPEC process particularly in Si. Recently, this technique has been tried to apply to many different kinds of materials such as compound semiconductors (GaAs, BP, InP and GeSi), carbide (SiC), silicides (NiSi2 and CoSi2) and even oxides (Al2O3 and SrTiO3). In this article, the authors reviewed the features, proposed mechanisms and application of IBIEC to Si and other materials with the existing state of affairs.
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