Design of Faster High Resolution Resists: Getting More Acid Yield from EUV Photons

Abstract

This paper discusses the development of an improved EUV Resist, XP-6627A, which easily resolves sub-30nm features at a photospeed of 12mJ/cm2. This new resist is designed for increased acid yield from greater secondary electron generation. XP-6627A has comparable resolution to XP-6627G, with a concomitant photospeed improvement of >50%. Due to the high activation nature of the resist, the best postexposure bake condition is 130°C for 90s. This material also has an ultralow diffusion coefficient as derived from CD vs PEB time studies. Finally, due to the low volatility of the resist components, the resist has low outgassing rates.