Abstract
A tapered-mode coupler integrated GeSi electro-absorption (EA) modulator is investigated theoretically. To improve the parameter insensitivity and modulation efficiency of the GeSi EA modulator based on evanescent coupling, a tapered coupler on the GeSi layer is introduced in our design. The two coupling mechanisms in our suggested structure are compared. Both the beam propagation method (BPM) calculation and coupling mode theory show almost 100% power transfer from the bottom rib waveguide to the GeSi layer. After a series of designs of the tapered coupler, we get a modulator with the advantages of both evanescent-coupling modulators (Feng et al 2011 Opt. Express 19 7062–7, Feng et al 2012 Opt. Express 20 22224–32, Liu et al 2008 Nature Photon. 2 433–7, Liu et al 2007 Opt. Express 15 623–8) and butt-coupling modulators (Lim et al 2011 Opt. Express 19 5040–6), that are ease of fabrication, low coupling loss, performance stability and high modulation efficiency.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
