Abstract
In this paper, a normally-OFF high voltage GaN HFETs based on the Polarization Super Junction (PSJ) concept has been presented. In this new device, threshold voltage (VTH) can be controlled by adjusting the etching depth of the recessed region without modifying on-resistance (RON) characteristics. The threshold voltage of E-mode device increased to 2 V while the threshold voltage for experimental D-mode structure was about −4 V. The challenge of achieving high breakdown voltage (BV) with minimum on-resistance has been addressed by the lateral scaling of recessed region to achieve an improved figure of merit (FOM). The specific on-resistance of the proposed E-mode PSJ HFET is maintained low while the BV of the device increases from 560 V to 800 V of the D-mode PSJ HFET with the same dimensional parameters.
Highlights
GaN high electron mobility transistors (HEMTs) are good candidates for high power, high frequency, and low loss applications because of their high critical breakdown field [1]
A normally-OFF high voltage GaN HFETs based on the Polarization Super Junction (PSJ) concept has been presented
The challenge of achieving high breakdown voltage (BV) with minimum on-resistance has been addressed by the lateral scaling of recessed region to achieve an improved figure of merit (FOM)
Summary
GaN high electron mobility transistors (HEMTs) are good candidates for high power, high frequency, and low loss applications because of their high critical breakdown field [1]. The development roadmap of GaN power semiconductor devices is currently geared towards power conversion systems with voltage rating between 600 V and 1.2 kV [2]. An alternative solution for manufacturing low cost high voltage GaN power switching devices that can overcome reliability and cost challenge is the Polarization Super Junction (PSJ) technology that is promising candidate for fully GaN based power ICs. Polarization Super Junction (PSJ) is unique technique to achieve charge balance not through impurity based doping control, but by engineering of positive and negative polarization charges inherent in the GaN materials. PSJ technology is based on a GaN/AlGaN/GaN double heterostructure there both 2DEG and 2DHG are well-confined to quantum wells and possess enhanced mobility with negligible impurity scattering [7]
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