Abstract
This article presents a simple and effective method for designing a dual-band power amplifier (PA). A microstrip coupled-line bandstop filter (BSF) is cascaded with a broadband PA, thus a notched band can be obtained in the wide operating band, realizing a dual-band characteristic of the PA. The simplified real frequency technique (SRFT) is employed to derive a broadband input matching networks covering the requisite frequency band. Appropriate fundamental impedance and second harmonic impedance matching are achieved at the ideal region of the Smith chart. For validation, an experimental prototype is fabricated and tested using a commercial GaN transistor Cree’s CGH40010F. The proposed dual-band PA is operated at 1.95–2.4 GHz and 2.65–3.1 GHz, with 61%–71% measured power-added efficiency (PAE) and 40.5–41.5 dBm of measured output power.
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