Abstract
This letter reports a novel synthesis method to design an extended dual-band power amplifier (PA). The proposed matching networks exhibit dual-band impedance rotation, leading the transistor to yield flat gain at the two designed passbands and suppressed gain responses at frequencies outsides the passbands. The fabricated PA represents a competitive solution in multiband and multimode applications as compared with the conventional dual-band PA based on the multifrequency techniques. The transistor CGH40010F from Cree is employed for verification. At 1.4 and 2.4 GHz, the bandwidth has been extended over 150 MHz at each individual passband. The implemented PA can deliver the saturated output power of 10 W minimum, and power-added efficiency of 65% minimum has been measured.
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