Abstract
In a Radio Frequency Identification (RFID) circuit, the rectifier plays a vital role since it converts the received RF energy from a distant transmitter (reader) to power the entire RF circuit of the passive tag. The thin-film transistors have the potential to affect the rectifier circuit performance using the channel structural modification in the device to accomplish better gate-control for low-power operations. In this paper, the authors have presented a novel design of a double-gate amorphous In-Ga-Zn-O (IGZO) based thin-film transistor with a tri-active layer channel structure. Further, the experimental characterization of the device has been implemented using the SPICE model to analyze the device performance in the rectifier circuits. The simulation reports the competitive results with an improved rectifier performance using the proposed structure. The performance of ultra-low-power rectifier topologies has been compared with the conventional rectifier circuit. Among others, the differential rectifier circuit arrangement has a high power conversion efficiency of 20.06 % for low input 0.45 V-0.61 V, whereas Self-$\text{V}_{\mathrm {TH}}$ -Cancellation (SVC) configuration optimum power consumption is $0.14~\mu W$ . The promising results suggest the device deployment in the passive RFID tags and implantable devices in ultra-low-power integrated circuits.
Highlights
In recent times, Radio Frequency Identification (RFID) systems are increasing much progressively due to the technological advancements in device designs
Since the RFID tag operates quite distant from the reader, the received RF signal is attenuated due to travel distance, and often a very low voltage is induced across the tag VOLUME XX, 2017
The authors have proposed a Double-Gate (DG) amorphous IGZO thin-film transistor that contains a Tri-Active Layer (TAL) channel structure obtained from the experimental characterization of multi-stack layers and implemented using LEVEL3 SPICE to analyze the performance in various RFID rectifier circuits at the operating frequency of 13.56-MHz
Summary
Radio Frequency Identification (RFID) systems are increasing much progressively due to the technological advancements in device designs. Non-silicon materials such as an oxide or organic material in Thin-Film Transistors (TFTs) has drawn significant attention in the last decade for the production of low-cost, flexible, transparent RFID tags [2,3,4]. The authors have proposed a Double-Gate (DG) amorphous IGZO thin-film transistor that contains a Tri-Active Layer (TAL) channel structure obtained from the experimental characterization of multi-stack layers and implemented using LEVEL3 SPICE to analyze the performance in various RFID rectifier circuits at the operating frequency of 13.56-MHz. The paper is organized as follows: Section II details the device model and foundation of layer structure for our design.
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