Design of distributed feedback lasers grown on Si using time-domain traveling wave model combined with mode refractive index method

Abstract

This paper proposes an optimization method combining the time-domain traveling wave model and the mode refractive index method, employed for characterizing both the transverse and longitudinal modes of quantum dot distributed feedback (DFB) lasers grown on Si. We use this method to optimize the overall performance of the Si-based DFB laser, and determine the material and chip structural parameters, including the ridge width, etching depth, grating thickness and grating position as optimization parameters. Here, the optimal DFB laser operating under fundamental transverse and single longitudinal mode is obtained. Its threshold current is as low as 5 mA, the slope efficiency is as high as 0.77 mW mA−1, and the side mode suppression ratio is up to 48 dB. When the injection current is 150 mA, the output power exceeds 100 mW. The corresponding ridge width, etching depth and grating thickness are 2 μm, 1.3 μm and 20 nm, respectively. The distance from the grating to the active region is 200 nm. Therefore, the novel method presented in this paper offers an effective scheme for the design of DFB lasers grown on Si with excellent performance.