Design of Digital Electronics for High Temperature Using Basic Logic Gates Made of 4H-SiC MESFETs

Abstract

– 4H-SiC MESFET transistors are very attractive devices for high temperature application and communications. The JFET and MESFET transistors have a promising potential for integrated circuits able to operate at high temperature and harsh radiation environments, due to the superior electrical, mechanical and chemical proprieties of 4H-SiC. Progresses in the manufacturing of high quality SiC substrates open the possibility to new circuit applications.