Abstract
The design and results of a D-band frequency doubler using two parallelly mounted Schottky dual-diode chips are presented, which is considered as a unit in the doubler design. The doubler features four Schottky anodes closely located at a compact region, being no need for additional power dividing and combining circuit. The purpose is to verify the feasibility of a simple and compact hybrid microwave integrated circuit (HMIC) circuitry for frequency doubling with a higher power-handling capability in this band, and an effective fast method for designing the matching networks of the doubler. With an input driving power of about 20 dBm at the E-band and bias voltage of 0 V, it delivers an output power of 6 ± 1 dBm across the band of 140–152 GHz and 2–4.7 dBm over the bands of 152–160 and 135–140 GHz.
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