Abstract
Current mirror integration (CMI) read out integrated circuit (ROIC) topology provides a low input impedance to photo-detectors and provides large injection efficiency, large charge handling capacity and snapshot mode operation without in-pixel opamps. The ROIC described in this paper has been implemented with a modified current mirror circuit, with matched PMOS pairs for detector input stage and its biasing. The readout circuit has been designed for 30 × 30 μm2 pixel size, 4 × 4 array size, variable frame rate, 5 Mega pixel per second (Mpps). Experimental performance of the test chip has achieved 15 Me charge handling capacity, a high dynamic range of 83 dB, 99.8% linearity and 99.96% injection efficiency. The ROIC design has been fabricated in 3.3 V 1P6M UMC 180 nm CMOS process and tested up to 5 MHz pixel rate at room and at cryogenic temperature.
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