Abstract
This letter presents a design of three-valued content-addressable memory (3CAM) cell with low capacitance comparison logic using carbon nanotube field-effect transistors (CNTFETs). By utilising Synopsis HSPICE and latest layout design tools for 32 nm CNTFET, it is shown that the proposed 3CAM cell achieves 65% reduction in search delay and 6% saving in cell area with no loss of power in comparison with CNTFET-based 3CAM cell recently proposed in the literature.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.