Design of content-addressable memory cell using CNTFETs

Abstract

This letter presents a design of three-valued content-addressable memory (3CAM) cell with low capacitance comparison logic using carbon nanotube field-effect transistors (CNTFETs). By utilising Synopsis HSPICE and latest layout design tools for 32 nm CNTFET, it is shown that the proposed 3CAM cell achieves 65% reduction in search delay and 6% saving in cell area with no loss of power in comparison with CNTFET-based 3CAM cell recently proposed in the literature.