Abstract
We have demonstrated for the first time synthesis of amorphous As–Se films within a large compositional range (AsxSe100-x (15 < x < 96)), even beyond the As–Se glass formation region, by means of PECVD. The ability to design the film composition, structure and optical properties via changing the type of plasma discharge and energy input as well as precursor's temperature is revealed. The results obtained evidence the enlarged capability of the PECVD method developed in terms of production of As–Se-based planar structures.
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