Design of Complementary Metal–Oxide Semiconductor Ring Modulator by Built‐In Thermal Tuning

Abstract

A ring modulator of 25 Gb/s by integrated thermal tuning was invented within a 130-nm complementary metal–oxide semiconductor procedure. Its highspeed section, employing a P–N junction that works at a carrier-depletion mode, enables 25 Gb/s modulation and has an extinction ratio >6 dB with only a 2-V peak-to-peak driving voltage. Its thermal tuning section allows the device to work in a broad range of wavelengths. The optical eye displays an elimination ratio greater than 6 dB. The modulation power stays predictable at <24 fJ/bit of circuit molding. Some advantages include high-performance scaling, many core computing systems calling for radical approaches to provide ultra-energy efficiency, and the high bandwidth density interconnection at a low cost. Silicon (Si) is a promising material because of its low latency, low power consumption, high bandwidth, and high density. For photonic solutions to succeed in intra/inter-chip applications, the communications link power consumption, including all electronic circuits. Ring modulators are used in digital communication, in transmitters and receivers.