Abstract
This paper presents a new single pole double throw (SPDT) RF MEMS switch design based on a torsional series capacitive switch. The torsional configuration and use of floating metal reduce the stiction probabilities. Use of a single series capacitive switch compared to the conventional approach of a capacitive and series combination, offers compact size, higher bandwidth and superior reliability. The optimized SPDT topology offers a wider bandwidth of 17 GHz (3---20 GHz) with insertion loss of ?0.3 to ?0.4 dB and isolation ?20 to ?44 dB. The proposed structure actuates at 9 V and the contact force varies in the elastic contact regime from 20 to 68 µN for the bias voltage of 10---15 V.
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