Abstract

This paper presents a design and simulation study of a common-gate with common-source active balun circuit implemented in a standard 90-nm complementary metal-oxide semiconductor (CMOS) process. The active balun design is intended for worldwide interoperability for microwave access (WiMAX) application, with operating frequency of 5.8 GHz and supply voltage of 1 V. Measurements are taken for parameters namely gain difference, phase difference, and noise figure. The common-source active balun design achieved a minimal gain difference of 0.04 dB, phase difference of 180 ± 1.5 degrees, and noise figure of 8.76 dB, which are comparable to past active balun designs and researches. The design eventually achieved a low power consumption of 4.45 mW.

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