Design of CNTFET-Based CCII Using gm/ID Technique for Low-Voltage and Low-Power Applications

Abstract

This paper introduces for the first time all the steps required in the optimal design of carbon nanotube field-effect transistor (CNTFET)-based second generation current conveyor (CCII) using transconductance-to-drain current ratio ([Formula: see text]) technique for low-voltage (LV) and low-power (LP) applications. The [Formula: see text] technique is a well-established methodology for CMOS analog IC design. However, the difference between CMOS and CNTFET is that CMOS has continuous width while the width of CNTFET is discrete and depends on different parameters like the number of tubes, pitch and diameter ([Formula: see text]) of the carbon nanotube (CNT). Therefore, there is a need for a design technique by which one can easily design analog circuits using CNTFETs. The CCII is based on two-stage op-amp and two inverters used as class AB amplifiers. The performance of CCII has been extensively examined in terms of DC, AC and transient responses of node voltages, branch currents and node impedances using HSPICE simulations. The CCII operates at [Formula: see text]0.5[Formula: see text]V and has 172[Formula: see text][Formula: see text]W of power consumption. The designed CCII provides very high 3-dB bandwidth (BW) for current gain ([Formula: see text][Formula: see text]GHz as well as voltage gain ([Formula: see text][Formula: see text]GHz.