Design of CMOS Low-Noise Amplifier for Low-Band Ultra-Wideband System

Zhe-Yang Huang Zhe-Yang Huang,Nan-Ku Lu Nan-Ku Lu,Chun-Chieh Chen Chun-Chieh Chen,Che-Cheng Huang Che-Cheng Huang

doi:10.1109/apmc.2005.1606978

Design of CMOS Low-Noise Amplifier for Low-Band Ultra-Wideband System

Zhe-Yang Huang Zhe-Yang Huang, Nan-Ku Lu Nan-Ku Lu + Show 2 more

https://doi.org/10.1109/apmc.2005.1606978

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Publication Date: Dec 4, 2005

Citations: 4

Affiliation: Chung Yuan Christian University

#GHz 3dB Bandwidth #Low-noise Amplifier + Show 8 more

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Abstract

In this paper, a low-noise amplifier (LNA) is designed for ultra-wideband (UWB) system. The design consists of two shunt-peaked cascode amplifiers and it is fabricated in 0.18/spl mu/m standard RF CMOS process. The LNA gives 18.03dB gain and 1.9GHz 3dB bandwidth (3.1-5.0GHz) while consuming 25.92mW through a 1.8V supply. Over the 3.1-5.0GHz frequency band, a minimum noise figure of 2.74dB and input return loss lower than -9.6dB have been achieved.

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