Abstract
For programming such as writing or erasing of the flash memory, two different kinds of high voltage are required, and the charge pump circuit has been used for this. The charge pump circuit proposed in this paper uses the VCO to adjust the clock frequency in order to match the reference voltage approved from the outside and the charge pump's output. Accordingly, I suggest a circuit that can produce a predictable output, regardless of not only an error by fabrication but also MOSFET's body effect generated in each part of the charge pump.
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