Abstract
A low-noise amplifier (LNA) plays an indispensable role in a communication system for amplification purposes at the transceiver. LNA design in radio frequency (RF) circuits involve various key attributes, namely noise figure (NF), gain, and power consumption. This paper focuses on the design of a C-band LNA for satellite communication system with a centre frequency of 6 GHz using ATF-55143 enhancement-mode pseudomorphic high-electron-mobility transistor (E-pHEMT) technology. The LNA performance is augmented by adding inductors to the drain and gate of the ATF-55143 transistor. Smith chart impedance matching technique is implemented to foster a more precise matching for input and output of the LNA. In this work, the C-band LNA is biased at VDS of 2.7 V and IDS of 10 mA. Electromagnetic (EM) software is used to design and simulate the performance of the LNA circuit layout. Simulation results indicate NF of 2.66 dB and power gain (S21) of 12.29 dB. The LNA consumes 27 mW from a 3 V DC supply.
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