Design of cathode doping notches to achieve uniform fields in transferred-electron devices

Abstract

A numerical method for designing notch doping profiles for transferred-electron devices is presented. The profile is calculated to be consistent with a given uniform field in the active region and carrier density at the end of the notch. An example of this method is done for InP using a computer model which includes relaxation effects. For this example it is found that the required notch doping is p type and the active region doping is slightly nonuniform due to relaxation effects.