Abstract
AbstractThe design of impedance‐matching networks, which use lumped and distributed impedance transformers, is presented to achieve the broadband performance of microwave amplifiers. Matching circuits of an amplifier are constructed by cascading lumped and distributed impedance transformers that exhibit Chebyshev transfer characteristics. Element values and impedance transformation ratios for specified transformer structures are calculated and tabulated in terms of their insertion losses and ripples. To validate the performance of matching networks using lumped and distributed impedance transformers, the results are applied to the design of an octave‐band microwave transistor amplifier. © 2001 John Wiley & Sons, Inc. Microwave Opt Technol Lett 31: 405–408, 2001.
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