Abstract
A novel bi-directional transmission gate driver circuit integrated by amorphous silicon thin film transistors (a-Si:H TFTs) has been proposed. In the proposed design, the noise suppression structure of the gate driver utilized the AC drive inverter to reduce the degradation of the pull down TFTs. The clock frequency of AC signal is 30 Hz, which could reduce dynamic power consumption of the circuit. In addition, the synchronous controlled method in this research could reduce the amount of device in gate driver.The simulated result shows the good output performance of the gate driver and match the circuit design.
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