Design of asymmetric barrier layers for suppression of parasitic recombination in laser diodes with GaAs waveguide

F.I Zubov,A.E Zhukov,M.E Muretova,M.V Maximov,Yu.M Shemyakov,L.V Asryan

doi:10.1109/iclo54117.2022.9839838

Design of asymmetric barrier layers for suppression of parasitic recombination in laser diodes with GaAs waveguide

F.I Zubov, A.E Zhukov + Show 4 more

https://doi.org/10.1109/iclo54117.2022.9839838

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Publication Date: Jun 20, 2022

Affiliation: St Petersburg University, Ioffe Institute, Virginia Tech

#Asymmetric Barrier Layers #GaAs Waveguide + Show 8 more

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Abstract

We developed a design of a 980 nm laser diode with GaAs waveguide and thin asymmetric barrier layers (ABLs) placed close to both sides of the active region. The use of AlGaAsSb ABL (or alternatively three AlInAs barriers separated by GaAsP spacers of different thicknesses) for blocking electron transport and GaInP ABL for blocking hole transport suppresses parasitic recombination in the waveguide by 99%.

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