Design of an SRAM-bitcell with enhanced self-recoverability from soft errors for space and critical terrestrial applications

Abstract

SSoft errors like single event upset (SEU) and single event double node upset (SEDNU) are significant issues with SRAM-based memory used not only under high radiation environments but also for modern lower technology nodes. The reduction in modern technology may give a higher charge-sharing effect among nodes. The charge-sharing effect means the disturbance on one node may affect the other neighboring nodes. There are many SRAM cells that have been proposed that give single node upset resilience, but very few can solve the charge sharing effect issue or SEDNU. In this paper, a 14T radiation-hardened-based SRAM cell has been proposed to overcome single node upset at any nodes and SEDNU upset at its storage nodes. Simulation results show that only DNUSRM and proposed SRAM give 0% probability of logical flipping. So, out of all compared SRAM cells only DNUSRM and the proposed cell are SEDNU tolerant. The proposed cell gives 50.6%, 22.5%, 0.74%, 17.91%, 60.0%, -19.1%, -5.46%, 25.7%, and 5.22% better total power, area, read speed, write speed, sensitive area, critical charge, hold stability, read stability, and write stability compared to DNUSRM cell. Hence, the better balance among the parameters makes the proposed SRAM more suitable for space and critical terrestrial applications.