Abstract
The proposed design of the optical memory unit cell contains dual micro ring resonators in which the effect of lasing without inversion (LWI) in three-level nano particles doped over the optical resonators or integrators as the gain segment is used for loss compensation. Also, an on/off phase shifter based on electromagnetically induced transparency (EIT) in three-level quantum dots (QDs) has been used for data reading at requested time. Device minimizing for integrated purposes and high speed data storage are the main advantages of the optical integrator based memory.
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