Abstract

This paper presents a V-band Low Noise Amplifier (LNA) that uses a cascode configuration. This LNA will be used as a part of a WPAN (Wirless Personal Area Network) receiver in the millimeter-wave band at 60 GHz. This low noise amplifier is designed according to the MMIC technology (Monolithic Microwave Integrated Circuit) in PH15 process from UMS foundry and uses a 0.15 μm GaAs PHEMT (Pseudomorphic High Electron Mobility Transistor). The particularity of this LNA compared to other LNAs in literature is its very low noise figure which is equal to 1dB and its high gain which is about 23 dB. An input return loss of −6.61 dB and an output return loss of −11.26 dB are also achieved by this LNA.

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