Design of a tunable DWDM multiplexer using four defect layers of GaAs nonlinear photonic crystals

Abstract

The transmission characteristic of a defective 1-D nonlinear photonic crystal structure is numerically simulated using transfer matrix method. The photonic crystal structure consists of four defective layers of GaAs which introduces between the alternating layers of two semiconductor materials. Here, Intensity as well as wavelength based refractive index of one semiconductor layer (GaAs) has been considered. It is theoretically studied that when the thicknesses of defected layers are decreased upto 120 nm then the transmittance of the structure is improved and it approaches 100 %. When a number of defective layers introduced in the proposed structure the transmittance of the structure is improved. Also the average line-width, quality factor and efficiency of this structure observed 0.31 nm, 6699.31 and 99.7 % when a Kerr coefficient is introduced in these 4-defect layers and it acts as a tunable DWDM demultiplexer for optical communication.