Abstract
By calculating the heterojunction band alignment of GeSn/SiGeSn, a Ge0.9Sn0.1/Si0.14Ge0.71Sn0.15 multi-quantum-well laser was designed, where three Ge0.9Sn0.1 layers act as wells separated by three Si0.14Ge0.71Sn0.15 layers as barriers. The maximum TE gain reaches 7000 cm−1 at 0.5 eV, and the maximum TM gain reaches 5500 cm−1 at 0.52 eV. The modal gain of the Ge0.9Sn0.1/Si0.14Ge0.71Sn0.15 multi-quantum-well laser we proposed and designed can reach 100 cm−1 with a current density of 5 kA/cm2. The result indicates that it is possible to obtain a Si-based laser.
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