Design of a p-i-n type inverted perovskite solar cell using SiOx as down-conversion material to improve PCE: Simulation and optimization in SCAPS-1D

Abstract

In this research work, an inverted p-i-n type perovskite solar cell: ITO/PEDOT: PSS/CH3NH3PbI3/PCBM/Au has been simulated and optimized in SCAPS-1D. The optimized parameters in SCAPS-1D that improved solar performance were: perovskite thickness, the total defect density of perovskite, the total defect density of interfaces, series and shunt resistances, and device operating temperature. As a result, the efficiency (PCE) increased to 18.33%. Subsequently, when the silicon-rich oxide (SiOx) material was implemented in the simulation as downconversion energy material on the outside of the cell, a power conversion efficiency (PCE) of 23.7% was obtained. The SiOX film obtained experimentally by sputtering obtained good photoluminescence, absorption coefficient, band gap, and transmittance characteristics before and after thermal annealing. These characteristics have been considered for the proposed device. It is indicated that the inverted perovskite solar cell of type pi-n: SiOx/ITO/PEDOT:PSS/CH3NH3PbI3/PCBM/Au has better J-V output values and EQ quantum efficiency than the perovskite solar cell without SiOx.