Abstract
This paper presents a wideband RF front-end with novel current-reuse wide band low noise amplifier (LNA), current-reuse V—I converter, active double balanced mixer and transimpedance amplifier for short range device (SRD) applications. With the proposed current-reuse LNA, the DC consumption of the front-end reduces considerably while maintaining sufficient performance needed by SRD devices. The RF front-end was fabricated in 0.18 μm RFCMOS process and occupies a silicon area of just 0.11 mm2. Operating in 433 MHz band, the measurement results show the RF front-end achieves a conversion gain of 29.7 dB, a double side band noise figure of 9.7 dB, an input referenced third intercept point of −24.9 dBm with only 1.44 mA power consumption from 1.8 V supply. Compared to other reported front-ends, it has an advantage in power consumption.
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