Design of a High-Efficiency 40-kV, 150-A, 3-kHz Solid-State Pulsed Power Modulator

Abstract

This paper deals with the detailed design of a pulsed power modulator using insulated gate bipolar transistor (IGBT) switches for industrial applications. Output specifications of the proposed modulator are as follows: variable output pulse voltage 1~40 kV; pulse width 0.5~5 μs ; maximum pulse repetition rates 3 kHz, and average output power of 13 kW. The proposed pulsed power modulator consists of a high-voltage capacitor charger based on a high-efficiency resonant inverter and pulse generator part including a series of connected 24 pieces power cells. To verify the proposed design, PSpice modeling was performed. Finally, experimental results proved the reliability and robustness of the proposed solid-state pulsed power modulator.