Abstract

This paper reports design of a simple four-branch optical power splitter using five parallel rectangular waveguides coupling in a gallium-nitride (GaN) semiconductor/sapphire for telecommunication links. The optimisation was conducted using the 3D FD-BPM method for long wavelength optical communication. The result shows that, at propagation length of 925 μm, the optical power input was successfully split into four uniform output beams, each with 24% of total input power. It is also shown that the relative output power distribution is almost stable through the C-band range. At the operating wavelength of 1.55 μm, the proposed power splitter has an excess loss lower than 0.2 dB. This study demonstrates the opportunity to develop optical interconnections from UV-Visible to near IR wavelengths.

Highlights

  • Optical power splitters play an essential role as a passive component in optical communication

  • The numerical experiments were conducted using OptiBPM software based on a slowly varying envelope approximation combined with MATLAB software

  • The field propagation calculations through the structure were carried out using the finite difference beam propagation method (FD-BPM), which is suitable for the proposed design

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Summary

Introduction

Optical power splitters play an essential role as a passive component in optical communication. They are functioned for splitting and combining optical signals. III-nitride based devices may operate at much higher optical power levels. Those characteristics make it suitable for the harsh environment. Previous research indicated that III-nitrides have very lowtemperature sensitivity, especially in infrared wavelength regions [12]. This is another crucial advantage for applications in optical communications. Previous research [11] showed that small propagation loss occurred when gallium-nitride (GaN) with aluminium-nitride/gallium-nitride (AIN/GaN) buffer layer were integrated on sapphire substrates

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