Abstract
This letter presents a simple method to design dual-band high-efficiency power amplifiers (PAs). The dual-band coupler is exploited to design the output circuits of the PA. By proper selection of impedance conditions of terminal ports, the dual-band coupler can convert the fundamental impedance of transistor to the standard 50- $\Omega $ load at two frequencies. At the same time, the second harmonic impedance is also controlled without the need for additional tuning. For validation, a dual-band high-efficiency PA is designed and fabricated by using CGH40010F GaN HEMT. Measurements indicate that the designed PA can deliver saturated output power of 41.6 and 42.1 dBm at 1 and 2.3 GHz, respectively. Also, the obtained drain efficiency exceeds 72% at both frequencies.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
