Abstract
We proposed a novel method to realize a compact bandpass filter (BPF) using a standard CMOS process for a 35 GHz passive millimeter-wave (PMMW) imaging system. We first investigated the principal loss of low resistivity silicon substrate, which could be effectively reduced by adding a ground plane in bottom layer. In order to improve the inherent poor quality of the designed dual-mode BPF due to stacking less oxide layers, a novel design skill by adding a branch line in M3 layer was provided. A CMOS BPF with an insertion loss of 4 dB and good selectivity were realized in succeed.
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