Abstract
In this paper, a compact and low-cost, high-efficiency microwave power amplifier is proposed and designed. The proposed amplifier operates at the 5.8 GHz band for wireless communications systems. The amplifier is designed on a low-cost 5 W GaN HEMT transistor from Qorvo and a RO4350B substrate from Rogers. The high-efficiency can be obtained by treating the second harmonic at the input side. The output side is treated up to the third harmonic. Both small-signal and large-signal performance of the proposed amplifier were evaluated by both simulation and experiment. The simulated and measured results validate that the designed power amplifier can be realized in a compact size and delivered 5 W power with a high-efficiency at 5.8 GHz band.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
